FQU5N50CTU-WS mosfet equivalent, n-channel mosfet.
* 4.0 A, 500 V, RDS(on) = 1.4 Ω @VGS = 10 V
* Low Gate Charge (Typ. 18 nC)
* Low Crss (Typ. 15 pF)
* Fast Switching
* 100% Avalanche Tested
* Impr.
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switc.
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